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UNISONIC TECHNOLOGIES CO., LTD 70N06
70 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.
1
Power MOSFET
1
TO-220
TO-262
FEATURES
* RDS(ON) = 15m@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability
1
TO-263
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 70N06L-TA3-T 70N06G-TA3-T 70N06L-T2Q-T 70N06G-T2Q-T 70N06L-TQ2-T 70N06G-TQ2-T 70N06L-TQ2-R 70N06G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source 70N06L-TA3-T (1) Packing Type (2) Package Type (3) Lead Plating (1) R: Tape Reel, T: Tube (2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free, L: Lead Free Package TO-220 TO-262 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel
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ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V TC = 25C 70 A Continuous Drain Current ID TC = 100C 56 A Drain Current Pulsed (Note 2) IDM 280 A Single Pulsed (Note 3) EAS 600 mJ Avalanche Energy Repetitive (Note 2) EAR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation PD 200 W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repeativity rating: pulse width limited by junction temperature L=0.24mH, IAS=70A, VDD=25V, RG=20, Starting TJ=25C ISD48A, di/dt300A/s, VDDBVDSS, Starting TJ=25C
THERMAL DATA
PARAMETER Junction to Ambient Junction to Case SYMBOL JA JC RATINGS 62 1.2 UNIT C/W C/W
ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Miller Charge) SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V, VDS = 0 V VGS = -20V, VDS = 0 V MIN 60 1 100 -100 0.08 2.0 12 3300 530 80 12 79 80 52 90 20 30 4.0 15 TYP MAX UNIT V A nA nA V/C V m pF pF pF ns ns ns ns nC nC nC
BVDSS/TJ ID = 1mA, Referenced to 25C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QGD VDS = VGS, ID = 250 A VGS = 10 V, ID = 35 A VGS = 0 V, VDS = 25 V f = 1MHz
VDD = 30V, VGS=10V,ID =70 A (Note 1, 2) VDS = 60V, VGS = 10 V, ID = 48A (Note 1, 2)
140 35 45
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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 70A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 70A dIF / dt = 100 A/s Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width300s, Duty Cycle2% 2. Essentially independent of operating temperature.
Power MOSFET
MIN
TYP
MAX 1.4 70
UNIT V A
280 90 300 ns C
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TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD VDS VGS RG 10%
tD(ON) tR
Power MOSFET
VDS
90%
10V
Pulse Width1s Duty Factor0.1%
D.U.T.
VGS
tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS QG
12V
50k 0.2F 0.3F
Same Type as D.U.T.
10V QGS
VDS VGS DUT 1mA
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS
R
G
VDD D.U.T.
10V tp
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Capacitance (pF)
Drain-Source On-Resistance, RDS(ON) (m)
Drain Current, ID (A)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Reverse Drain Current, ISD (A) Drain Current, ID (A)
25
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1 50
Gate-to-Source Voltage, VGS (V)
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Thermal Response, ZJC (t)
Drain Current , ID,(A)
Drain-Source Breakdown Voltage, BVDSS(Normalized) (V)
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
Drain Current, ID (A)
Drain-Source On-Resistance, RDS(ON), (Normalized) ()
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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